机译:基于标准SOI CMOS技术的第一近紫外线和蓝色增强的背面照明单光子雪崩二极管
Korea Inst Sci & Technol Post Silicon Semicond Inst Seoul 02792 South Korea;
Delft Univ Technol Delft Inst Microsyst & Nanoelect Else Kooi Lab NL-2628 CT Delft Netherlands;
Delft Univ Technol Delft Inst Microsyst & Nanoelect Else Kooi Lab NL-2628 CT Delft Netherlands;
Ecole Polytech Fed Lausanne Inst Microengn CH-2002 Neuchatel Switzerland;
Ecole Polytech Fed Lausanne Inst Microengn CH-2002 Neuchatel Switzerland;
Avalanche photodiode (APD); backside etching; backside illumination (BSI); blue; buried oxide (BOX); CMOS image sensor; detector; electronic photonic integration; Geiger-mode avalanche photodiode (G-APD); high-volume manufacturing; integrated optics device; integration of photonics in standard CMOS technology; near infrared (NIR); near ultraviolet (NUV); optical sensing; optical sensor; photodetector; photodiode; photomultiplier; photon counting; photon timing; RGB-D sensor; semiconductor; sensor; silicon; silicon on insulator (SOI); single-photon avalanche diode (SPAD); single-photon imaging; standard CMOS technology; uniformity;
机译:基于标准SOI CMOS技术的首款近紫外和蓝光增强背面照明单光子雪崩二极管
机译:标准CMOS中的单光子雪崩二极管图像传感器的进展:从二维单片到三维堆叠技术
机译:0.5标准CMOS工艺中单光子雪崩二极管的表征-第2部分:等效电路模型和盖革模式读数
机译:标准CMOS技术中单光子雪崩二极管噪声特性的保护环依赖性
机译:商用深亚微米CMOS技术中的浅沟槽隔离边界单光子雪崩二极管。
机译:基于时间相关的CMOS单光子雪崩二极管线传感器的距离分辨拉曼雷达
机译:采用标准SOI CMOS技术制造的首个单光子雪崩二极管,具有器件的完整特性