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Structured Bit-Interleaved LDPC Codes for MLC Flash Memory

机译:用于MLC闪存的结构化比特交错LDPC码

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Due to a structural feature in the programming process of MLC (two bits per cell) and TLC (three bits per cell) flash memory, the majority of errors that occur are single-bit errors. Moreover, the voltages used to store the bits typically result in different bit error probabilities for the two or three types of bits. In this work we analyze binary regular LDPC codes in the standard bit-interleaved coded modulation implementation, assuming different probabilities on the bits, to determine what ratio of each type of bit should be connected at the check nodes to improve the decoding threshold. We then propose a construction of nonbinary LDPC codes using their binary images, resulting in check node types that come close to these optimal ratios.
机译:由于MLC(每个单元2位)和TLC(每个单元3位)闪存的编程过程中的结构特征,因此大多数错误都是单位错误。此外,用于存储位的电压通常导致两种或三种类型的位具有不同的位错误概率。在这项工作中,我们在标准的比特交织编码调制实现中分析二进制规则LDPC码,并假设这些比特的概率不同,以确定应在校验节点处连接每种比特类型的比率以提高解码阈值。然后,我们建议使用非二进制LDPC码的二进制图像来构造它们,从而使校验节点类型接近这些最佳比率。

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