首页> 外文期刊>Quantum Electronics, IEEE Journal of >Performance Enhancement of Ultraviolet Light-Emitting Diodes by Incorporating a Thin Al(In)GaN Interlayer in Multiquantum-Well Region
【24h】

Performance Enhancement of Ultraviolet Light-Emitting Diodes by Incorporating a Thin Al(In)GaN Interlayer in Multiquantum-Well Region

机译:通过在多量子阱区域掺入薄的Al(In)GaN中间层来增强紫外线发光二极管的性能

获取原文
获取原文并翻译 | 示例
       

摘要

In this paper, the performance improvement of 380-nm InGaN/AlGaN ultraviolet light-emitting diodes (UV-LEDs) is investigated by incorporating an undoped Al(In)GaN thin interlayer between the InGaN well and AlGaN barrier in multiquantum-well (MQW) active region. By inserting the graded-composition AlGaN and AlInGaN thin interlayers, the light output powers of UV-LEDs are significantly increased by 70% and 105% at 20 mA, respectively, as compared with the LED without the interlayer. Remarkable efficiency enhancement in the UV-LEDs with graded-composition AlGaN and AlInGaN interlayers is mainly attributed to the further improvement of the electron confinement and hole injection with more uniform distribution in the MQW active region. Besides, photoluminescence and atomic force microscope analyses indicate that the MQW quality can be enhanced by incorporating a graded-composition AlInGaN thin interlayer in the MQW active region of UV-LEDs.
机译:本文通过在多量子阱(MQW)中的InGaN阱和AlGaN势垒之间引入未掺杂的Al(In)GaN薄中间层,研究了380 nm InGaN / AlGaN紫外发光二极管(UV-LED)的性能改进。 )活动区域。与没有中间层的LED相比,通过插入渐变组成的AlGaN和AlInGaN薄中间层,UV-LED的光输出功率在20 mA下分别显着提高了70%和105%。具有渐变组成的AlGaN和AlInGaN中间层的UV-LED的效率显着提高主要归因于电子约束和空穴注入的进一步改进,在MQW有源区中分布更加均匀。此外,光致发光和原子力显微镜分析表明,通过在UV-LED的MQW有源区域中加入渐变成分的AlInGaN薄中间层,可以提高MQW的质量。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号