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Graphene Q-Switched Cr:ZnSe Laser

机译:石墨烯调Q Cr:ZnSe激光器

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For the first time, to the best of our knowledge, a stable Q-switched Cr:ZnSe laser was realized with the graphene saturable absorber grown on SiC substrate. Under an absorbed pump power of 1.8 W, a maximum average output power of 256 mW was obtained with an optical-to-optical conversion efficiency of 14% and a slope efficiency of 19.6%, corresponding to the highest single pulse energy of 1.66 . The shortest pulse width and highest pulse repetition rate were 157 ns and 169 kHz, respectively. Using a nanoscan beam analyzer, the values of graphene Q-switched Cr:ZnSe laser were measured to be 1.09 and 1.16 for the horizontal and vertical directions. The experimental results indicate that graphene, combined with SiC substrate, provides a simple and cheap way to achieve efficient passively Q-switched lasers at 2.4 .
机译:据我们所知,这是第一次,稳定的Q开关Cr:ZnSe激光器通过在SiC衬底上生长的石墨烯可饱和吸收体实现。在1.8 W的吸收泵浦功率下,最大平均输出功率为256 mW,光-光转换效率为14%,斜率效率为19.6%,对应于最高单脉冲能量1.66。最短的脉冲宽度和最高的脉冲重复率分别为157 ns和169 kHz。使用纳米扫描光束分析仪,石墨烯调Q的Cr:ZnSe激光的水平和垂直方向的值分别为1.09和1.16。实验结果表明,石墨烯与SiC衬底相结合,提供了一种简单而廉价的方法来实现高效的2.4被动Q开关激光器。

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