Band Structure, Optical Transition, and Optical Gain of Type-II InAs(N)/GaSb Quantum Wells Laser Diodes Modeled Within 16-Band and 14-Band $kp$ Model

摘要

We have used both 16-band and 14-band Hamiltonians to investigate electronic band-structure, optical gain and transitions of two type-II quantum wells with InAs and InAsN as the active layers surrounded by a GaSb layer, respectively. The obtained results are discussed in the context of the importance of the contribution of the p-type conduction band nonparabolicity. The results are given explicitly in the and directions. We have also reported a comparison between the results obtained within the 16-band and 10-band models in terms of optical gain and threshold current density for -oriented laser structure. For typical carrier concentration of 8 at 300 K, we achieved an emission wavelength of with a peak gain of order obtained within 16-band model while for the 10-band model, a peak gain of order is reached providing an emission wavelength at .