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Improving the Vertical Light Extraction Efficiency of GaN-Based Thin-Film Flip-Chip LED With Double Embedded Photonic Crystals

机译:使用双嵌入式光子晶体提高基于GaN的薄膜倒装芯片LED的垂直光提取效率

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摘要

The vertical light-extraction efficiency (LEE) of the thin-film flip-chip light-emitting diodes with the embedded photonic crystal (PhC) is investigated using the finite-difference time-domain method. This paper systematically analyzes the dependence of the vertical LEE on the vertical structure and the embedded PhC parameters. It is found that the introduction of the p-side embedded PhC and n-side embedded PhC does not significantly destroy the microcavity resonant effects. In particular, a twofolds enhancement in the vertical LEE is obtained for the optimized structure by scanning the double embedded PhCs parameters and the physical mechanisms for the enhancement of the vertical LEE are discussed.
机译:采用时域有限差分法研究了具有嵌入式光子晶体(PhC)的薄膜倒装芯片发光二极管的垂直光提取效率(LEE)。本文系统地分析了垂直LEE对垂直结构和嵌入式PhC参数的依赖性。已经发现,引入p侧嵌入式PhC和n侧嵌入式PhC不会显着破坏微腔共振效应。特别地,通过扫描双重嵌入的PhCs参数,对于优化的结构获得了垂直LEE的双重增强,并且讨论了用于增强垂直LEE的物理机制。

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