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Effect of Undercut Etch on Performance and Fabrication Robustness of Metal-Clad Semiconductor Nanolasers

机译:底蚀对金属包覆半导体纳米激光器性能和制造鲁棒性的影响

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摘要

We use optical, thermal, and electrical simulation to evaluate the effects of using varying amounts of undercut etch on wavelength-scale and subwavelength metal-clad semiconductor nanolasers (MCSELs). We find that as MCSEL diameter decreases, the optical performance becomes more sensitive to slight amounts of sidewall tilt. A modest amount of undercut (25%) dramatically improves the optical performance, reducing modal threshold gain to 100 or less for lasers with core radius of 225, 550, or 775 nm, even in the presence of significant sidewall tilt (20° gain sidewall or ±8° pedestal sidewall tilt). Finally, we examine the effects of the increased undercut on nanolaser thermal performance and find that the increased resistive heating is insignificant near threshold, even for subwavelength nanolasers.
机译:我们使用光学,热学和电学仿真来评估使用变化量的底切蚀刻对波长范围和亚波长金属包覆的半导体纳米激光器(MCSEL)的影响。我们发现,随着MCSEL直径的减小,光学性能对少量的侧壁倾斜变得更加敏感。适度的底切(25%)可以显着改善光学性能,对于纤芯半径为225、550或775 nm的激光器,即使存在明显的侧壁倾斜(20°增益侧壁),也可以将模态阈值增益降低至100或更小或±8°的基座侧壁倾斜度)。最后,我们检查了底切增加对纳米激光热性能的影响,发现即使对于亚波长纳米激光,增加的电阻加热在阈值附近也微不足道。

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