机译:底蚀对金属包覆半导体纳米激光器性能和制造鲁棒性的影响
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA, USA;
Bismuth; Gold; Indium gallium arsenide; Indium phosphide; Microwave integrated circuits; Silver; Substrates; Semiconductor lasers; design optimization; nanofabrication; nanoscale devices; thermal management;
机译:腔增强自发发射的金属包覆半导体纳米激光器的调制带宽
机译:具有底切和侧壁倾斜的电泵半导体纳米激光器的压缩电阻和电流拥挤
机译:具有横向底切刻蚀电流限制结构的Ridge半导体激光器
机译:用于Si上纳米激光的金属包覆InP腔
机译:亚波长金属包覆半导体激光器。
机译:坚固耐用的高性能n型有机半导体
机译:金属包覆半导体纳米激光器的温度效应