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Generation of high-average-power ultrabroad-band infrared pulses

机译:高平均功率超宽带红外脉冲的产生

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This paper summarizes the results of analytical and numerical studies on a novel technique that is capable of providing high average power ultra broadband radiation that extends from approximately 2 to 16 /spl mu/m. Such a spectrum has several potential applications, including telecommunications and remote sensing. Additional attractive features of the new source are its anticipated compact size, light weight, ruggedness, and affordable cost. The technique is based on the interaction of a beat wave with a nonlinear medium. The beat wave is formed from the mixing of two CO/sub 2/ laser beams with closely spaced wavelengths, such as 9.5 and 9.6 /spl mu/m. The discrete ultrabroad-band spectrum is generated in a nonlinear optical medium by the self-phase modulation process, a third-order nonlinearity. The long-wavelength portion of the spectrum, i.e., from 5 to 16 /spl mu/m is produced directly from the interaction of the beat wave with a GaAs crystal. The short-wavelength portion of the spectrum is produced from the interaction of a frequency-doubled beat wave with a GaAs crystal following the chirping of the pulse by a different GaAs crystal and its subsequent optimal compression by a thin sapphire slab.
机译:本文总结了一项新颖技术的分析和数值研究结果,该技术能够提供从大约2到16 / spl mu / m的高平均功率超宽带辐射。这样的频谱具有多种潜在应用,包括电信和遥感。新货源的其他吸引人的特点是其预期的紧凑尺寸,重量轻,坚固耐用和可承受的成本。该技术基于拍波与非线性介质的相互作用。拍波是由两个CO / sub 2 /激光束的混合形成的,这些激光束具有紧密间隔的波长,例如9.5和9.6 / spl mu / m。离散的超宽带光谱是通过自相位调制过程(三阶非线性)在非线性光学介质中生成的。频谱的长波长部分,即5至16 / spl mu / m,直接由拍波与GaAs晶体的相互作用产生。频谱的短波部分是由倍频拍频波与GaAs晶体的相互作用产生的,该脉冲是由不同的GaAs晶体对脉冲进行rp调后,随后由薄蓝宝石平板进行的最佳压缩而产生的。

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