Quasi-3-D simulation of high-brightness tapered lasers

摘要

We present a simulation tool useful to optimize the design of semiconductor tapered lasers and to study the physical processes inside of them. This is achieved by using a state-of-the-art quasi-three-dimensional (quasi-3-D) electrical and thermal model, coupled to a two-dimensional (2-D) wide-angle beam propagation method optical model. A calibration procedure of model parameters is proposed to contribute to the development of reliable simulation tools. Different laser diodes with a tapered gain section, emitting at 735 and 975 nm, are used to validate the model through the extensive comparison of experimental and simulated results. The suitability of 2-D and 3-D electrical, thermal, and optical models is discussed in terms accuracy and computational effort.