Reliability studies of Hf-doped and NH_(3)-nitrided gate dielectric for advanced CMOS application

摘要

A novel technique is proposed for forming high-K dielectric of HfSiON by sequentially doping base oxide with Hf and nitridation with NH_(3). The HfSiON gate dielectric demonstrates excellent device performances such as only 10percent degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared to conventional SiO_(2) gate dielectric at the same equivalent oxide thickness (EOT). Additionally, negligible flatband voltage shift is achieved with this technique. Excellent performances in electrical stressing are also demonstrated by the dielectric.