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A theoretical investigation of the Chalk-Harrod and modified Chalk-Harrod mechanisms involved in hybrid integrated circuit building

机译:混合集成电路构建中涉及的Chalk-Harrod和改进的Chalk-Harrod机制的理论研究

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Nowadays the relevance of silicon chemistry is spreading due to the applications of Si, in particular in semiconductors, in order to obtain an increasing number of performing materials. A theoretical investigation based on the Density Functional Theory has been done on the reaction paths implied in the Pt-catalysed alkene hydrosilylation, a process through which the selective grafting of organic molecules to silicon can be obtained. We studied the Si-H oxidative addition of SiH_4 to a diphosphine molecule, the C_2H_4 insertion on Pt-H and Pt-SiH_3 bonds, the isomerisation of the product of the C_2H_4 insertion, and the two following Si-C and C-H reductive eliminations. The set of these processes are known as the Chalk-Harrod mechanism and the modified Chalk-Harrod mechanism, respectively. The main goal of this work has been to identify the rate determining step of both mechanisms. Moreover, by employing dynamics simulations, we have reached a possible alternative product in the oxidative addition step.
机译:如今,由于Si的应用,尤其是在半导体中,硅化学的重要性正在扩大,以便获得越来越多的高性能材料。基于密度泛函理论的理论研究已经在Pt催化的烯烃氢化硅烷化中暗示的反应路径上进行,该过程可以通过该过程将有机分子选择性接枝到硅上。我们研究了SiH_4的Si-H氧化加成到二膦分子上,Pt-H和Pt-SiH_3键上的C_2H_4插入,C_2H_4插入的产物的异构化以及随后的两个Si-C和C-H还原消除。这些过程的集合分别称为Chalk-Harrod机制和改进的Chalk-Harrod机制。这项工作的主要目标是确定两种机制的速率确定步骤。此外,通过采用动力学模拟,我们在氧化加成步骤中获得了一种可能的替代产品。

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