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Helium thermal desorption and retention properties of V-4Cr-4Ti alloy used for first wall of breeding blanket

机译:用于繁殖毯第一壁的V-4Cr-4Ti合金的氦热解吸和保留特性

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摘要

Helium irradiation experiments of V-4Cr-4Ti alloy with various surface treatments were conducted in an electron cyclotron resonance (ECR) ion irradiation apparatus. After helium ion irradiation at room temperature, the helium thermal desorption and retention properties were examined by thermal desorption spectroscopy (TDS). Ion energy of helium beam was 5 keV. Three groups of desorption peaks appeared at around 500, 850 and 1200 K in the TDS spectrum. After helium ion irradiation at ion fluence of 1 x 10~(21) He/m~2, the retained helium desorbed mainly at around 1200 K and all of the implanted helium atoms were retained. With increasing fluence up to 5 x 10~(21) He/m~2, the amount of helium desorbed at 500 K increased. For the polished samples with annealing at various temperatures, the desorption peak observed at around 500 K shifted to higher temperature region. Smallest retained amount of helium was observed in the V-alloy with polishing followed by annealing at 1373 K.
机译:在电子回旋共振(ECR)离子辐照设备中对V-4Cr-4Ti合金进行了各种表面处理的氦辐照实验。在室温下照射氦离子后,通过热脱附光谱法(TDS)检查氦的热脱附和保留特性。氦束的离子能量为5 keV。在TDS光谱中,三组解吸峰出现在500、850和1200 K左右。在离子通量为1 x 10〜(21)He / m〜2的条件下照射氦离子后,保留的氦主要在1200 K附近解吸,并且保留了所有注入的氦原子。随着通量提高到5 x 10〜(21)He / m〜2,在500 K下解吸的氦气量增加。对于在不同温度下退火的抛光样品,在约500 K处观察到的解吸峰移至较高的温度区域。在V合金中观察到最小的氦气残留量,并对其进行抛光,然后在1373 K下进行退火。

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