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Preliminary neutron shielding calculations of the electronics in the EAST BES systems focusing on neutron induced displacement damage

机译:EAST BES系统中电子器件的初步中子屏蔽计算,重点是中子引起的位移损伤

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摘要

Monte Carlo N-Particle (MCNP) calculations were carried out to compare neutron shielding capabilities of three frequently used neutron shielding materials: polyethylene without neutron absorbers, polyethylene with boron absorbers and polyethylene with lithium absorbers, according to Non Ionizing Energy Loss (NIEL). The results of 1D shielding calculations showed that simple neutron moderating materials can provide sufficient and cheap shielding against 2.45 MeV and 14.1 MeV fusion neutrons, in terms of 1 MeV neutron equivalent flux, in silicon targets, which is the most commonly used material of electronic components. Based on these results a new shielding concept is proposed which can be taken into consideration where the reduction of displacement damage is the main goal and the free space available for shielding is limited. Based on this shielding concept detailed 3D calculations were carried out to describe the properties of the neutron shielding of the Beam Emission Spectroscopy (BES) system installed at the EAST tokamak. (C) 2016 Elsevier B.V. All rights reserved.
机译:根据非电离能量损失(NIEL),进行了Monte Carlo N粒子(MCNP)计算以比较三种常用的中子屏蔽材料的中子屏蔽能力:不带中子吸收剂的聚乙烯,带硼吸收剂的聚乙烯和带锂吸收剂的聚乙烯。一维屏蔽计算的结果表明,简单的中子缓和材料可以针对硅靶中的2.45 MeV和14.1 MeV聚变中子(以1 MeV中子当量通量)提供足够而廉价的屏蔽,这是电子组件中最常用的材料。基于这些结果,提出了一种新的屏蔽概念,可以考虑将位移损坏的减少作为主要目标,并且可用于屏蔽的自由空间受到限制。基于这种屏蔽概念,进行了详细的3D计算,以描述安装在EAST托卡马克上的束流发射光谱(BES)系统的中子屏蔽特性。 (C)2016 Elsevier B.V.保留所有权利。

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