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Effect of pre-damage induced by argon ions on the following 60 keV helium ions irradiation behavior of tungsten-tantalum alloy

机译:氩离离子诱导预损伤对钨 - 钽合金60keV氦离子辐照行为的影响

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摘要

W-5 %Ta specimens were irradiated by 800 keV Ar8+ ions at a fluence of 5.27 x 10(17) ions/m(2), then under exposure to 60 keV He2+ ions to a fluence of 1.04 x 10(22) ions/m(2). In this paper, an effect of Ar8+ ions pre-damaged on the following He2+ irradiation behavior of W-5 %Ta is reported. These results suggest that the size of large helium blisters on the surface of W-5 %Ta could be effectively reduced by the Ar8+ ions pre-damage. However, the helium retention was found to be systematically higher in the pre-damaged W-5 %Ta. Ar8+ ions pre-damage can greatly enhance the intensity of helium release peaks at low temperature ( 650 K). In addition, the hardness of undamaged and pre-damaged W-5 %Ta is approximately 7.3 and 9.8 GPa, respectively, indicating that the damage induced by Ar8+ ions irradiation has a significant effect on the mechanical properties of W-5 %Ta.
机译:将W-5%TA标本用5.27×10(17)离子/ m(2)的流量照射800keV Ar8 +离子,然后在暴露于60keV He2 +离子的情况下,流量为1.04×10(22)离子/ m(2)。在本文中,报告了在W-5%Ta的以下He2 +辐照行为上预损坏的Ar8 +离子的效果。这些结果表明,通过AR8 +离子预损坏,可以有效地减少W-5%TA表面上的大氦气泡的尺寸。然而,发现氦保留在预损伤的W-5%Ta中系统地更高。 AR8 +离子预损伤可以大大提高低温下氦释放峰的强度(<650 k)。此外,未脉冲和预损伤的W-5%Ta的硬度分别为约7.3和9.8GPa,表明Ar8 +离子辐射诱导的损伤对W-5%Ta的机械性能具有显着影响。

著录项

  • 来源
    《Fusion Engineering and Design》 |2020年第5期|111533.1-111533.7|共7页
  • 作者单位

    Beihang Univ Dept Phys Beijing 100191 Peoples R China;

    Beihang Univ Dept Phys Beijing 100191 Peoples R China;

    Beihang Univ Dept Phys Beijing 100191 Peoples R China;

    Acad Engn Phys China Jiangyou Sichuan Peoples R China;

    Beihang Univ Dept Phys Beijing 100191 Peoples R China|Beihang Univ Beijing Key Lab Adv Nucl Energy Mat & Phys Beijing 100191 Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Ar(8+)ions irradiation; He(2+)ions irradiation; W-5Ta; Pre-Damaged; TDS; Helium blisters;

    机译:AR(8+)离子照射;他(2+)离子照射;W-5%Ta;预损坏;TDS;氦水泡;

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