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Eu~(2+)-doped CsBr photostimulable X-ray storage phosphors - analysis of defect structure by high-frequency EPR

机译:Eu〜(2+)掺杂的CsBr可激发光的X射线存储荧光粉-高频EPR分析缺陷结构

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摘要

Eu~(2+)-doped CsBr in form of needle image plates is a promising alternative to the granular Eu~(2+):BaFBr X-ray storage phosphor with respect to photo-stimulated luminescence, yield and spatial resolution. However, in order to understand the corresponding mechanisms on an atomic scale, the defect structure of Eu~(2+)-doped CsBr photostimulable X-ray storage phosphors has to be analyzed. By means of high-frequency electron paramagnetic resonance (EPR) spectroscopy, three types of defects have been observed - an electrically neutral dimeric (Eu_(Cs)~· - O_(Br)~')~× defect complex and a neutral trimeric (V_(Br)~× - Eu_(Cs)~·- V_(Cs)~')~× defect complex (F_z-center), as well as acceptor-type F-centers (V_(Br)~·) that are generated by the trapping of electrons at initially neutral bromine vacancies.
机译:针状图像板形式的掺Eu〜(2+)的CsBr在光刺激的发光,产量和空间分辨率方面是颗粒状Eu〜(2 +):BaFBr X射线存储荧光粉的有前途的替代品。然而,为了从原子尺度上理解相应的机理,必须分析掺杂Eu〜(2+)的CsBr可光激发X射线存储磷光体的缺陷结构。借助高频电子顺磁共振(EPR)光谱,已观察到三种类型的缺陷-电中性二聚体(Eu_(Cs)〜--O_(Br)〜))×缺陷配合物和中性三聚体( V_(Br)〜×-Eu_(Cs)〜·-V_(Cs)〜')〜×缺陷复合物(F_z-center)以及受体型F中心(V_(Br)〜·)通过在最初的中性溴空位处捕获电子而产生。

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