Nonideal double-slope effect in organic field-effect transistors

摘要

With the development of device engineering and molecular design, organic field effect transistors (OFETs) with high mobility over 10 cm~2·V~(-1)·s~(-1) have been reported. However, the nonideal double-slope effect has been frequently observed in some of these OFETs, which makes it difficult to extract the intrinsic mobility OFETs accurately, impeding the further application of them. In this review, the origin of the nonideal double-slope effect has been discussed thoroughly, with affecting factors such as contact resistance, charge trapping, disorder effects and coulombic interactions considered. According to these discussions and the understanding of the mechanism behind double-slope effect, several strategies have been proposed to realize ideal OFETs, such as doping, molecular engineering, charge trapping reduction, and contact engineering. After that, some novel devices based on the nonideal double-slope behaviors have been also introduced.