RF and Thermal Design of Compound Semiconductor Devices using MEMS Approach

摘要

The optimisation of devices RF and thermal properties is challenging the designer. Driving compound semiconductor devices to THz frequencies requires dedicated design features in the same way as they require optimised heatsinking capabilites. Both requirements can be met using MEMS approaches with membrane technologies. Benefits of this technology are shown with a 60 GHz power sensor resulting in higher sensitivity, a THz capable Schottky diode foreseen to operate at 600 GHz and an integrated 1 THz emitter based on optical heterodyning. Close interaction between device technology and RF device simulation is essential for the development of reliably operating devices at these frequencies.