DIFFUSION AND HIGH-FREQUENCY NOISE OF ELECTRONS IN AMORPHOUS SEMICONDUCTORS AT LOW ELECTRIC FIELDS

摘要

The Ohmic conduction, diffusion, and high-frequency noise in amorphous semiconductors are here investigated by means of a Monte Carlo implementation of a full three-dimensional variable-range hopping transport model between localized states. Quantities like the carrier-velocity autocorrelation function, the noise power spectrum, the diffusion coefficient and the ohmic conductivity are obtained from numerical simulations at room and lower temperatures. Some interesting features of the linear-response regime typical of hopping transport are observed and discussed.