Wafer-Level High-Power Device Testing

摘要

As semiconductor device complexity increases, new problems emerge, and finding solutions to previously minor difficulties becomes critical. A range of approaches to many problems was presented at recent SWTW conferences, some only theoretical and others proven in the production environment. With regard to high-power device testing, detailed research findings have been discussed and contrasted. A degree of continuity among themes can be seen from year to year as significant amounts of work on specific topics accumulates. For example, Ibele and Reitinger referenced a 1998 paper by D. Slaby from Cray Research that described a 20% wafer-to chuck thermal conductivity increase due to filling the wafer-to-chuck interface cavities with helium.