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Study of Ni/Al Interface Diffusion by Molecular Dynamics Simulation

机译:Ni / Al界面扩散的分子动力学模拟研究

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摘要

Molecular dynamics simulation of Ni/Al interface diffusion is carried out by Embedded Atom Method (EAM) potential. The problem how the temperature affects Ni/Al interface diffusion is discussed. The initial dynamic behavior of Ni/Al interface diffusion at high temperature is shown. The study in this letter is helpful to understand the origin of diffusion phenomenon.
机译:Ni / Al界面扩散的分子动力学模拟是通过嵌入式原子方法(EAM)进行的。讨论了温度如何影响Ni / Al界面扩散的问题。示出了高温下Ni / Al界面扩散的初始动力学行为。这封信中的研究有助于理解扩散现象的起源。

著录项

  • 来源
    《Engineering》 |2011年第3期|p.227-232|共6页
  • 作者单位

    Key Laboratory of OptoElectronic Science and Technology for Medicine of Ministry of Education, Fujian Provincial Key Laboratory for Photonics Technology, School of Physics and OptoElectronics Technology, Fujian Normal University, Fuzhou, China;

    Key Laboratory of OptoElectronic Science and Technology for Medicine of Ministry of Education, Fujian Provincial Key Laboratory for Photonics Technology, School of Physics and OptoElectronics Technology, Fujian Normal University, Fuzhou, China;

    Key Laboratory of OptoElectronic Science and Technology for Medicine of Ministry of Education, Fujian Provincial Key Laboratory for Photonics Technology, School of Physics and OptoElectronics Technology, Fujian Normal University, Fuzhou, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    molecular dynamics simulation; interface diffusion; EAM potential;

    机译:分子动力学模拟界面扩散EAM潜力;
  • 入库时间 2022-08-18 01:01:21

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