首页> 外文期刊>IEE Proceedings. Part J >Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 /spl mu/m
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Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 /spl mu/m

机译:用于可调二极管激光吸收光谱的室温GaInAsSb / GaSb量子阱激光器约2.35 / spl mu / m

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摘要

Novel GaInAsSb/GaSb multiple quantum well lasers grown by molecular beam epitaxy have successfully operated in continuous wave around 2.35 /spl mu/m at room temperature. The temperature and current tuning properties have been characterised by tunable diode laser absorption spectroscopy. These optical properties allowed a wide spectral scan from 2.27 /spl mu/m to 2.36 /spl mu/m. Experiments of gas absorption have been carried out in direct absorption measurements in continuous wave regime. From the point of view of trace gas analysis, wavelength modulation has been successfully performed at 19/spl deg/C around 2.36 /spl mu/m. An external cavity has then been added to the setup to obtain monomodal emission. These appealing results are very attractive for portable low-cost and room temperature trace pollutants analysis.
机译:通过分子束外延生长的新型GaInAsSb / GaSb多量子阱激光器已经成功地在室温下以约2.35 / spl mu / m的连续波工作。温度和电流调谐特性已通过可调二极管激光吸收光谱进行了表征。这些光学性质允许从2.27 / spl mu / m到2.36 / spl mu / m的宽光谱扫描。气体吸收实验已经在连续波状态下的直接吸收测量中进行。从痕量气体分析的角度来看,已经成功地在19 / spl deg / C约2.36 / spl mu / m的波长下执行了波长调制。然后将外部腔体添加到设置中以获得单峰发射。这些诱人的结果对于便携式低成本和室温痕量污染物分析非常有吸引力。

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