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Modeling electrostatic force microscopy for conductive and dielectric samples using the boundary element method

机译:使用边界元方法对导电和介电样品进行静电力显微镜建模

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摘要

A boundary element formulation is generalized for modeling electrostatic force microscopy (EFM) and related techniques. This formulation is able to predict measurable quantities (e.g., capacitance, force, force gradient) due to probe-sample electrostatic interactions, provided that the relevant sample (conductive or dielectric) properties (surface topography and trapped charge distributions) are prescribed. For a certain voltage bias applied between the EFM probe tip and a sample of interest, the Coulombic force and force gradient can be computed via the Maxwell stress tensor and implicit differentiation, respectively. The numerical scheme can be employed to quantify EFM images and analyze sample surfaces.
机译:概括了边界元素公式,以用于建模静电力显微镜(EFM)和相关技术。如果规定了相关的样品(导电或电介质)特性(表面形貌和捕获的电荷分布),则该公式能够预测由于探针-样品静电相互作用而产生的可测量量(例如,电容,力,力梯度)。对于在EFM探针尖端和目标样品之间施加的一定电压偏置,可以分别通过麦克斯韦应力张量和隐式微分计算库仑力和力梯度。数值方案可用于量化EFM图像和分析样品表面。

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