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Fast identification of cracks using higher-order topological sensitivity for 2-D potential problems

机译:使用高阶拓扑敏感性快速识别裂纹,以解决二维潜在问题

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摘要

This article concerns an extension of the topological sensitivity (TS) concept for 2D potential problems involving insulated cracks, whereby a misfit functional J is expanded in powers of the characteristic size a of a crack. Going beyond the standard TS, which evaluates (in the present context) the leading tya2) approximation of J, the higher-order TS established here for a small crack of arbitrarily given location and shape embedded in a 2-D region of arbitrary shape and conductivity yields the O(α~* ) approximation of J. Simpler and more explicit versions of this formulation are obtained for a centrally symmetric crack and a straight crack. A simple approximate global procedure for crack identification, based on minimizing the O(α~* ) expansion of J over a dense search grid, is proposed and demonstrated on a synthetic numerical example. BIE formulations are prominently used in both the mathematical treatment leading to the O(α~* )approximation of J and the subsequent numerical experiments.
机译:本文涉及对涉及绝缘裂纹的2D潜在问题的拓扑敏感性(TS)概念的扩展,由此失配泛函J扩展了裂纹特征尺寸a的幂。超出了标准TS,该标准TS评估了(在当前情况下)J的领先tya2)近似值,此处建立的高阶TS是针对任意形状和嵌入任意形状的2D区域中嵌入的任意形状的小裂纹而建立的。电导率得出J的O(α〜*)近似值。对于中心对称裂纹和直裂纹,此公式更简单,更明确。提出了一种基于最小化密集搜索网格上的J的O(α〜*)展开的简单的近似裂纹识别全局程序,并在一个合成的数值示例上进行了演示。 BIE公式在导致J的O(α〜*)逼近的数学处理以及随后的数值实验中都得到了显着的应用。

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