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A Concurrency Buffer Control in B-Trees for Flash-Memory Storage Systems

机译:B树中用于闪存存储系统的并发缓冲区控件

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Huge-capacity flash-memory is now an economic solution for various portable devices and embedded systems, a NAND flash-based storage system has replaced a hard-disk drive in many applications. Recently, the implementation of database systems on NAND flash-based storage systems has become an important research topic. In particular, the B-tree index is an important data structure on database systems. With the very distinctive characteristics of flash-memory, previous work focuses on the manipulation of the B-tree index structures but the concurrency buffer control problem in flash-memory storage systems is not addressed. In the paper, we will propose a concurrency buffer control to increase the system throughput when two or more processes could access the same B-tree index structure.
机译:如今,大容量闪存已成为各种便携式设备和嵌入式系统的经济解决方案,基于NAND闪存的存储系统已在许多应用中取代了硬盘驱动器。近来,在基于NAND闪存的存储系统上实现数据库系统已经成为重要的研究课题。特别是,B树索引是数据库系统上的重要数据结构。由于闪存具有非常鲜明的特性,以前的工作集中在B树索引结构的操纵上,但是闪存存储系统中的并发缓冲区控制问题没有得到解决。在本文中,我们将提出并发缓冲区控制,以在两个或多个进程可以访问相同的B树索引结构时提高系统吞吐量。

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