Picosecond electro-optic probing of high-speed integrated circuits using external GaAs tip

摘要

External electro-optic sampling has been demonstrated on high-speed integrated circuits using a pulse-compressed mode-locked Nd:YAG laser and a sophisticated GaAs probe tip. The measurement at frequencies up to 40 GHz has been successfully performed with excellent voltage sensitivity of less than 3 mV/ square root (Hz).