Simultaneous achievement of low insertion loss, high contrast and low operating voltage in asymmetric Fabry-Perot reflection modulator

摘要

A normally-on high-performance asymmetric Fabry-Perot modulator using the quantum confined Stark effect in GaAs quantum wells confined by short period AlAs-GaAs superlattices is reported. The modulator is the first of this type to exhibit simultaneously low insertion loss (>1.65 dB), large reflectivity change (<68%) and practically infinite contrast at the Fabry-Perot resonance for an operating voltage swing of under 4 V.