New method for extraction of effective channel length in submicron MOSFETs

Iniewski K.; Salama C.A.T.

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New method for extraction of effective channel length in submicron MOSFETs

机译：提取亚微米MOSFET有效沟道长度的新方法

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摘要

A new method for effective channel length extraction in submicron MOSFETS is presented. It is based on measurements of the saturation voltage V/sub DSAT/ in devices with different channel lengths. The method has been tested using submicron double diffused drain (DDD) MOS devices.

机译：提出了一种有效提取亚微米MOSFETS沟道长度的新方法。它基于对具有不同通道长度的设备中的饱和电压V / sub DSAT /的测量。该方法已使用亚微米双扩散漏极（DDD）MOS器件进行了测试。

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来源
《Electronics Letters》 |1991年第6期|P.508-509|共2页
作者
Iniewski K.; Salama C.A.T.;
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作者单位

Dept. of Electr. Eng., Toronto Univ., Ont., Canada;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
insulated gate field effect transistors; semiconductor device models; semiconductor technology; DDD MOSFETs; effective channel length extraction; saturation voltage measurements; submicron MOSFETS;

机译：绝缘栅场效应晶体管;半导体器件模型;半导体技术;DDD MOSFET;有效沟道长度提取;饱和电压测量;亚微米MOSFETS;

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3. A channel resistance derivative method for effective channel length extraction in LDD MOSFETs [J] . Niu G., Cressler J.D. IEEE Transactions on Electron Devices . 2000,第3期

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New method for extraction of effective channel length in submicron MOSFETs

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