...
机译:具有高光功率处理能力的高速InGaAsP / InGaAsP MQW电吸收调制器
CNET, Bagneux, France;
III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor quantum wells; 1.53 micron; 2 V; 20 GHz; InGaAsP; MQW; drive voltage; electroabsorption modulator; high optical intensity; high optical power handling capacity; high-speed; large-signal dynamic performances; static characteristics;
机译:InGaAsP补偿应变MQW电吸收调制器在高光输入功率下大大改善了频率响应
机译:偏振无关的InGaAsP / InGaAsP MQW波导电吸收调制器
机译:具有1.2V驱动电压的高效InGaAsP / InGaAsP MQW电吸收调制器的工作速率为20 Gbit / s
机译:使用应变式InGaAsP / InGaAsP / InAsP MQW结构具有记录功率饱和的极化不敏感电吸收调制器
机译:高功率铝的制造:用于光学泵浦的0.8微米至1.0微米的InGaAsP / InGaP / GaAs激光器
机译:风阵风对光电力接地线电缆偏振模式色散高速特性的影响
机译:InGaAsp / IngaASP MQW DCPBH激光器的制造和调制特性在λ~1.57μm
机译:高功率脉冲操作加宽波导1.5 m InGaasp / Inp mQW激光器的设计与实现