Quantum well interferometric modulator monolithically integrated with 1.55 mu m tunable distributed Bragg reflector laser

摘要

The first monolithically integrated laser/interferometric modulator is reported. The total chip length of 2.5 mm includes a 970 mu m-long strained InGaAs-InGaAsP quantum well gain section, a 230 mu m-long wavelength tuning section containing a distributed Bragg reflector grating, and an 800 mu m-long active length Mach-Zehnder modulator based on electrorefractive InGaAsP-InP quantum wells. 4 V push-pull drive voltage produces 12.5 dB modulation depth with -9 dBm optical power coupled into a cleaved fibre.