Low threshold FS-BH laser on p-InP substrate grown by all-MOCVD

Ohkura Y.; Kimura T.

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Low threshold FS-BH laser on p-InP substrate grown by all-MOCVD

机译：全MOCVD在p-InP衬底上的低阈值FS-BH激光器

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摘要

A novel InGaAsP FS-BH laser structure using the selective growth characteristics of MOCVD on crystal facets has been developed. A threshold current as low as 12 mA and output power of 40 mW under CW operation have been achieved in the laser.

机译：已经开发出利用MOCVD在晶面上的选择性生长特性的新颖的InGaAsP FS-BH激光器结构。激光器在CW操作下已实现了低至12 mA的阈值电流和40 mW的输出功率。

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来源
《Electronics Letters》 |1992年第19期|P.1844-1845|共2页
作者
Ohkura Y.; Kimura T.;
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作者单位

Mitsubishi Electric Corp., Hyogu, Japan;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; leakage currents; optical workshop techniques; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 12 mA; 40 mW; CW operation; FS-BH laser; InGaAsP-InP; InP substrate; MOCVD; crystal facets; fabrication method; low threshold laser; p-type substrate; selective growth characteristics; semiconductor lasers; threshold current;

机译：III-V半导体;砷化镓;镓化合物;铟化合物;漏电流;光学车间技术;半导体生长;半导体结激光器;气相外延生长;12 mA;40 mW;CW操作;FS-BH激光器;InGaAsP-InP InP衬底MOCVD晶面制作方法低阈值激光器p型衬底选择性生长特性半导体激光器阈值电流;

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专利

1. High efficiency 0.5 W/A at 85/spl deg/C strained multiquantum well lasers entirely grown by MOVPE on p-InP substrate [J] . Nakamura T., Tsuruoka K. Electronics Letters . 1998,第6期

机译：完全由MOVPE在p-InP衬底上生长的85 / spl deg / C的高效0.5 W / A应变多量子阱激光器
2. Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates [J] . Akhil Raj Kumar Kalapala, Dong Liu, Sang June Cho, 光电进展（英文版） . 2020,第004期

机译：在天然AlN衬底上生长的光泵浦室温低阈值深紫外激光器
3. Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates [J] . Xiao-Hang Li, Theeradetch Detchprohm, Tsung-Ting Kao, Applied Physics Letters . 2014,第14期

机译：在蓝宝石衬底上生长的基于AlGaN的多量子阱激光器在249 nm和256 nm处的低阈值激发发射
4. All-MOCVD-grown BH laser on P-InP substrates [C] . Author(s): Takashi Nishimura Mitsubishi Optoelectronic and Microwave Devices Lab. Itami Hyogo Japan, E.Ishimura Mitsubishi Optoelectronic and Microwave Devices Lab. Itami Hyogo Japan, Yasuo Nakajima Mitsubishi Optoelectronic and Microwave Devices Lab. Itami City Hyogo Japan, Conference on optoelectronic interconnects . 1993

机译：在P-InP衬底上的全MOCVD生长的BH激光器
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. Super low threshold plasmonic WGM lasing from an individual ZnO hexagonal microrod on an Au substrate for plasmon lasers [O] . H. M. Dong, Y. H. Yang, G. W. Yang -1

机译：超低阈值等离激元WGM激光在Au基板上从单个ZnO六角形微棒发射用于等离激元激光器
7. Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates [O] . 2014

机译：在蓝宝石衬底上生长的基于alGaN的多量子阱激光器在249 nm和256 nm处的低阈值受激发射

Low threshold FS-BH laser on p-InP substrate grown by all-MOCVD

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