Determination of alpha factor of Fabry-Perot-type semiconductor laser by injection locking

摘要

Studying the bias voltage of an injection-locked semiconductor laser allows determination of the linewidth-enhancement factor alpha solely from the asymmetry in the locking range. This method was recently demonstrated for DFB lasers, but was thought to be unsuitable for FP lasers. The authors show that it can also be applied to FP lasers.