High speed non-selfaligned InP/InGaAs Npn heterojunction bipolar transistor grown by low pressure metal organic vapour phase epitaxy

摘要

Lattice matched GaInAs/InP Npn heterojunction bipolar transistors (HBTs) have been grown by lower pressure metal organic vapour phase epitaxy (MOVPE) and precessed with non-selfaligned fabrication techniques. The transistors exhibit a cutoff frequency of 60 GHz and maximum oscillation frequency of 32 GHz which are the highest values reported to date for GaInAs/InP HBTs grown by MOVPE.