'High frequency' quasiplanar GaInP/GaAs HBT with CBE selective collector contact regrowth

摘要

Quasiplanar GaInP/GaAs heterojunction bipolar transistors (HBTs) with selective regrowth of the collector contact are reported. Such devices have a planar surface topology which should allow large scale integration. The multilayer HBT structure and the selective regrown collector contact are realised by chemical beam epitaxy (CBE). Cutoff frequency and maximum oscillation frequency of 30 and 25 GHz respectively, have been obtained for devices with 2*15 mu m/sup 2/ emitter-base junction area.