Profiled current drive for pulsed bipolar transistor switching

Lazarus M.J.

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Profiled current drive for pulsed bipolar transistor switching

机译：用于脉冲双极晶体管开关的仿形电流驱动

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摘要

Preliminary investigations have been made of the profiling of base current drive to obtain fast turn-on without lifetime pulse stretching and turn-off delays.

机译：已经对基极电流驱动器的性能进行了初步研究，以获取快速导通而没有使用寿命脉冲延长和关断延迟的情况。

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《Electronics Letters》 |1993年第11期|P.943-944|共2页
作者
Lazarus M.J.;
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作者单位

Lancaster Univ., UK;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
bipolar transistors; power transistors; semiconductor device testing; semiconductor switches; switching; base current drive; fast turn-on; pulsed bipolar transistor switching;

机译：双极晶体管;功率晶体管;半导体器件测试;半导体开关;开关;基极电流驱动;快速导通;脉冲双极晶体管开关;

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专利

1. Hybrid MOS-bipolar transistor switching with profiled drive signal [J] . Lazarus M.J., Wilkes J. IEEE Transactions on Circuits and Systems. 1 . 1994,第10期

机译：具有轮廓驱动信号的混合MOS双极晶体管开关
2. Hybrid MOS-bipolar transistor switching with profiled drive signal [J] . Lazarus M.J., Wilkes J. IEEE Transactions on Circuits and Systems. I, Regular Papers . 1994,第10期

机译：具有轮廓驱动信号的混合MOS双极晶体管开关
3. Parametric Measurements of Switching Losses of Insulated Gate Bipolar Transistor in Pulsed Power Applications [J] . Strowitzki C.F. IEEE Transactions on Plasma Science . 2013,第10aPart1期

机译：脉冲功率应用中绝缘栅双极晶体管开关损耗的参数测量
4. An integrable base drive technology for very high current bipolar transistor switches [C] . van der Merwe, G.J., van Wyk, Industry Applications Society Annual Meeting, 1990., Conference Record of the 1990 IEEE . 1990

机译：用于超高电流双极晶体管开关的可集成基极驱动技术
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities [O] . Georgy Alymov, Vladimir Vyurkov, Victor Ryzhii, -1

机译：van Hove奇异性可实现石墨烯双层隧道晶体管中的突然电流切换
7. Experimental Investigation on Switching Characteristics of High-Current Insulated Gate Bipolar Transistors at Low Currents [O] . Guha Anirudh, Datta Aniket, Rangesh Babu C, 2014

机译：低电流大电流绝缘栅双极晶体管开关特性的实验研究
8. Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module. [R] . Ovrebo, G. K. 2015

机译：绝缘栅双极型晶体管（IGBT）功率模块中开关脉冲的热模拟。

Profiled current drive for pulsed bipolar transistor switching

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