InGaAs/InAlAs multiquantum-well waveguided pin photodiodes with wide tunability and avalanche multiplication

摘要

A new high-speed, waveguided InP based on the InGaAs/InAlAs multiquantum-well pin photodiode with gain and fabricated by metal organic vapour phase epitaxy is reported. The quantum-confined Stark effect can be used to tune this diode over a 250 nm range in the wavelength region around 1.55 mu m. A 3 dB bandwidth of more than 12 GHz and avalanche multiplication have been observed.