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首页> 外文期刊>Electronics Letters >Novel coplanar stripline to slotline transition on high resistivity silicon
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Novel coplanar stripline to slotline transition on high resistivity silicon

机译:高电阻率硅上的新型共面带状线到缝线过渡

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摘要

A novel coplanar stripline (CPS) to slotline transition has been fabricated and characterised on a high resistivity silicon wafer. The CPS and the slotline are on opposite sides of the wafer and are coupled electromagnetically. The coupling takes place at the location were the CPS is terminated in a short circuit. The are of the short circuit crosses the slotline at right angles. The measured average insertion loss and return loss per transition are better than 1.5 and 10 dB, respectively, with a bandwidth greater than 30% at 9.5 GHz.
机译:一种新型的共平面带状线(CPS)到缝线过渡的过程已经完成,并在高电阻率硅晶片上进行了表征。 CPS和缝隙线在晶片的相对侧,并且电磁耦合。耦合发生在CPS短路终止的位置。短路的区域与槽孔成直角。测得的每个跃迁的平均插入损耗和回波损耗分别优于1.5 dB和10 dB,在9.5 GHz时的带宽大于30%。

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