Backgating characteristics of 0.1 mu m gate In/sub 0.3/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP MODFETs with Er-doped In/sub 0.52/Al/sub 0.48/As buffer layer

摘要

Extremely low backgating currents ( approximately 30-40 mu A) are measured in 0.1 mu m gate In/sub 0.3/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP MODFETs having a new buffer layer material, Er-doped In/sub 0.52/Al/sub 0.48/As, grown at 500 degrees C by MBE. Rare-earth doped GaAs and the lattice-matched ternary have resistivity approximately 10/sup 2/-10/sup 5/ Omega -cm depending on Er-doping level.