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首页> 外文期刊>Electronics Letters >Gain measurement of high characteristic temperature 1.3 mu m GaInAsP/InP strained-layer quantum well lasers with temperature dependent reflectivity (TDR) mirror
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Gain measurement of high characteristic temperature 1.3 mu m GaInAsP/InP strained-layer quantum well lasers with temperature dependent reflectivity (TDR) mirror

机译:具有温度相关反射率(TDR)镜的高特征温度1.3μm GaInAsP / InP应变层量子阱激光器的增益测量

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摘要

By comparing the optical gain of 1.3 mu m strained-layer quantum well lasers with characteristic temperatures T/sub 0/ of 150 K (high) and 60 K (typical), it is found that temperature insensitive net gain plays an important role in reducing the temperature sensitivity of the threshold current. The resonance frequency for high T/sub 0/ lasers exhibits temperature insensitivity, resulting from the temperature insensitive net gain characteristics.
机译:通过比较特征温度T / sub 0 /为150 K(高)和60 K(典型值)的1.3μm应变层量子阱激光器的光学增益,发现温度不敏感的净增益在降低温度方面起着重要的作用。阈值电流的温度灵敏度。高T / sub 0 /激光器的谐振频率表现出温度不敏感,这是由于温度不敏感的净增益特性引起的。

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