Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer

摘要

Room temperature CW operation at the ground state has been achieved in self-formed InGaAs quantum dot lasers with a multi-stacked dot layer. By systematic investigation, discontinuous shifts of lasing wavelength from high-order sub-bands to the ground state are clearly demonstrated by varying the number of dot layers and the cavity loss.