Threshold reduction by rapid thermal annealing in MBE-grown AllnGaAs multiquantum well lasers on GaA

Ko J.; Mondry M.J.

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Threshold reduction by rapid thermal annealing in MBE-grown AllnGaAs multiquantum well lasers on GaA

机译：在GaA上MBE生长的AllnGaAs多量子阱激光器中通过快速热退火降低阈值

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来源
《Electronics Letters》 |1996年第4期|共页
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Ko J.; Mondry M.J.;
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正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Low threshold MBE-grown AlInGaAs/AlGaAs strained multiquantum-well lasers by rapid thermal annealing [J] . Ko J., Chen C.-H. Electronics Letters . 1996,第22期

机译：低阈值MBE生长的AlInGaAs / AlGaAs应变多量子阱激光器的快速热退火
2. Effects of well number, cavity length, and facet reflectivity on the reduction of threshold current of GaAs/AlGaAs multiquantum well lasers [J] . Kurobe A., Furuyama H. IEEE Journal of Quantum Electronics . 1988,第4期

机译：阱数，腔长和刻面反射率对GaAs / AlGaAs多量子阱激光器阈值电流减小的影响
3. Effects of rapid thermal annealing on quality of In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As multiquantum wells grown on a compositionally graded InAlAs/InAlGaAs metamorphic buffer layer [J] . Soo-Ghang Ihn, Seong-June Jo, Jong-In Song Applied Physics Letters . 2004,第26期

机译：快速热退火对在成分渐变的InAlAs / InAlGaAs变质缓冲层上生长的In_（0.52）Al_（0.48）As / In_（0.53）Ga_（0.47）As多量子阱质量的影响
4. Low threshold MBE-grown AlInGaAs-AlGaAs strained multiquantum-well lasers by rapid thermal annealing [C] . Ko, J., Ching-Hui Chen . 1996

机译：通过快速热退火低阈值MBE生长的AlInGaAs-AlGaAs应变多量子阱激光器
5. Investigation of the Effects of Rapid Thermal Annealing on MBE Grown GaAsBi/GaAs Heterostructures for Optoelectronic Devices. [D] . Grant, Perry C. 2013

机译：快速热退火对MBE生长的光电器件GaAsBi / GaAs异质结构影响的研究。
6. Improved ground-state modulation characteristics in 1.3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing [O] . Hanxue Zhao, Soon Fatt Yoon, Chun Yong Ngo, 2011

机译：通过快速热退火改善1.3μmInAs / GaAs量子点激光器中的基态调制特性
7. Improved ground-state modulation characteristics in 1.3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing [O] . Hanxue Zhao, Soon Yoon, Chun Ngo, 2011

机译：通过快速热退火改善1.3μmInAs / GaAs量子点激光器中的基态调制特性
8. Optical and Electrical Characterization of Pseudomorphic AlGaAs/InGaAs/GaAs Modulation-Doped Structures Processed by Rapid Thermal Annealing [R] . Dodabalapur, A., Kesan, V. P., Block, T. R., 1989

机译：快速热退火处理的假晶alGaas / InGaas / Gaas调制掺杂结构的光学和电学表征

Threshold reduction by rapid thermal annealing in MBE-grown AllnGaAs multiquantum well lasers on GaA

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