Time-dependent degradation law for reliable lifetime prediction in sub-0.25 /spl mu/m bulk silicon N-MOSFETs

摘要

The hot-carrier-induced degradation of sub-0.25 /spl mu/m bulk Si MOSFETs is studied. A new degradation law is proposed and compared to the main existing models. This comparison shows that the new model gives more accurate results. Using this degradation law, the maximum drain voltage for a 10% transconductance degradation after 10 years has been extracted. A reduced V/sub dmax/ as compared to the values given by the previous laws, which overestimate V/sub dmax/ for deep submicrometre devices, is determined.