High-temperature sigma-delta modulator in thin-film fully-depleted SOI technology

摘要

A second-order sigma-delta (/spl Sigma//spl Delta/) modulator for high-temperature (HT) applications is presented. The modulator exploits the advantages of the fully-depleted (FD) SOI CMOS technology as well as a dedicated design procedure in order to extend the temperature range of classical architectures up to 300/spl deg/C, thereby avoiding compensation circuits which add to the power dissipation.