Near room-temperature continuous-wave operation of electrically pumped 1.55 /spl mu/m vertical cavity lasers with InGaAsP/InP bottom mirror

摘要

The first near room-temperature continuous-wave (CW) operation of a vertical cavity laser based on an epitaxial InGaAsP/InP bottom mirror is reported. The structure employs a package of nine strain compensated GaInAsP quantum wells and a wafer-fused GaAs/AlGaAs top mirror. For a 10 /spl mu/m diameter device, the threshold current is 6 mA and the input threshold power is 21 mW. The maximum operating temperature is 17 and 101/spl deg/C for CW and pulsed conditions, respectively.