Metamorphic pin diodes for high isolation and low power consumption millimetre-wave switching MMICs

摘要

Two broadband millimetre-wave switching circuits using In/sub 0.52/Ga/sub 0.48/As pin diodes grown on a GaAs substrate are presented. To the best of the authors knowledge, this is the first time that metamorphic pin diodes have been used for switching MMICs. The performances of the pin diodes are discussed and excellent RF results from a single pole single throw (SPST) and single pole double throw (SPDT) switch are demonstrated.