Effects of laser activation on device behaviour for poly-Si thin-film transistors with different channel lengths

摘要

The effects of laser activation on device behaviour for low-temperature-processed poly-Si thin-film transistors (TFTs) is investigated. The source/drain resistance has a different weight on the device behaviour of laser-activated poly-Si TFTs for different channel lengths. When channel resistance is decreased as a result of the lower grain boundary number in short channel lengths, the source/drain resistance has a significant weight on the device on-state resistance, causing obvious sensitivity between device performance and laser activation energy density, compared with devices fabricated with a long channel length. From the manufacturing view, this sensitivity may cause a narrow laser activation process window resulting in device characteristic uniformity issues.