8mW 17/24 GHz dual-band CMOS low-noise amplifier for ISM-band application

摘要

As wireless applications expand, requirements for a radio that can support multi-bands and multi-standards are continuously increasing. In a single-chip radio, a low noise amplifier (LNA) plays an important role in the noise performance or sensitivity of the total receiver chain. Although up to now a number of broadband and dualband LNAs have been reported with good performance in CMOS technology, most previous work has focused on a low frequency range, below 10 GHz. In general a dual-band LNA can be achieved by combining two LNAs in parallel for each narrow band [1]. However, this approach demands twice the power dissipation, a large chip area and therefore a significant increase in cost. Recently the low power and compact-sized dual-band LNA using a switching inductor, capacitor and concurrent method also has been reported [2??4]. In this Letter a low power concurrent dual-band LNA is proposed which is suitable for 17.1??17.3 GHz and 24??24.25 GHz industrial, scientific and medical (ISM) band application.