High-resolution methane spectroscopy using InGaAsSb/AlInGaAsSb laterally-coupled index-grating distributed feedback laser diode at 3.23 ;C;m

摘要

A lateral etched-grating process was used to produce singlemode distributed feedback laser diodes at 3.23 μm. The devices are based on InGaAsSb/AlInGaAsSb type-I quantum well active regions grown on GaSb substrates by molecular beam epitaxy. The lasers were used in high-resolution spectroscopy of methane gas near the v₃, R₇ vibrational absorption transitions.