Scalable high-k metal-insulator-metal capacitors with low leakage, high breakdown fields and improved voltage linearity

摘要

Initial electrical results of scalable high dielectric constant metal-insulator- metal capacitors with low leakage, high breakdown fields, and improved voltage linearity are reported. Excellent combined properties are achieved with an optimised atomic layer deposition process to obtain a dielectric with a reproducible atomic structure that gives the optimum electrical properties of high temperature stability; scalability of capacitance density; linearity of capacitance with voltage; a high capacitor quality factor; low leakage at estimated operating voltages; and high breakdown fields. Applications of this technology development are many and varied owing to the capacitor being a key component in analogue-based circuitry, including analogue mixed signals units; radio frequency devices; microelectromechanical systems; capacitive tuning; resistive and dynamic random access memory, automotive, space, and medical devices.