Fabrication methods for performance improvement of Cu(ln,Ga)Se_2 thin film solar cells

摘要

Two advanced fabrication methods are introduced: the hydrogen peroxide (H_2O_2)-added chemical bath deposition technique and molybdenum (Mo) back-contact formation under 3 kW sputter power. The parameters of the short circuit current density (J_(sc)) and conversion efficiency (η) were improved over standard cells when the ZnS buffer layer was deposited in the H_2O_2-added chemical solution. Otherwise, the fill-factor and η were best at 3 kW Mo sputtering power conditions. Advanced fabrication methods are realised to improve cell performance without modifying the chemical composition of the Cu(In,Ga)Se_2 absorption layer.