70 GSa/s and 51 GHz bandwidth track-andhold amplifier in InP DHBT process

摘要

A differential 70 GSa/s track-and-hold amplifier has been designed and fabricated in a 320 GHz-fT InP double heterojunction bipolar transistor process. Measurements show a 51 GHz small-signal bandwidth with an S11 parameter lower than -15 dB up to 56 GHz. The transient operation is verified up to 70 GSa/s. 60 GSa/s spectral measurements give total harmonic distortion <-46 dB up to 7 GHz and <-37 dB over the whole measurement range.